mitsubishi igbt modules MG400V1US51A high power switching applications motor control applications MG400V1US51A outline drawing & equivalent circuit dimensions in mm feature ? the electrodes are isolated from case. ? enhancement-mode ? integrates fault-signal output circuit in package. (short-circuit and over-current) ? ul recognized yellow card no.e80276 file no.e80271 application general purpose inverters, servo drives and motor controls 118 0.8 104 0.6 4-m6 japan sen g c e e c e 11 0.6 54 0.6 68 0.8 11 0.6 44 0.6 26 0.6 10 0.6 8.5 0.6 47 0.6 4- 6.5 0.3 3-m4 25.5 22.5 20 +2.3 -1 +2 -1 116 0.8 weight: 420g +2 -1 3.5 0.5 66 0.8 c c e e e sen g equivalent circuit dec.2005
dec.2005 gate leakage current collector cut-off current gate-emitter cut-off voltage collector-emitter saturation voltage input capacitance switching time forward voltage reverse recovery time sense thermal resistance i ges i ces v ge(off) v ce(sat) c ies t d(on) t r t on t d(off) t f t off v f t rr i ses i c(sen-start) v sen r th(j-c) v ge = 20v, v ce = 0 v ce = 1700v, v ge = 0 i c = 400ma, v ce = 5v i c = 400a, t j = 25 c v ce = 10v, v ge = 0, f = 1mhz inductive load v cc = 900v i c = 400a v ge = 15v r g = 2 ? (note 1) i f = 400a, v ge = 0 i f = 400a, v ge = ?5v, di/dt = 1500a/ s (note 1) v sen ?e = 40v, v ce = 0, v ge = 0 v ge = 15v, v se = 14.8v (note 2) v ge = 15v, i c = 2400a (note 2) t ransistor stage diode stage 1700 20 40 400 800 400 800 2750 150 ?0 ~ 125 4000 (ac 1 minute) 2/3 3 t c = 25 c mitsubishi igbt modules MG400V1US51A high power switching applications motor control applications maximum ratings (ta = 25 c) symbol parameter collector-emitter voltage gate-emitter voltage sense-emitter voltage collector current forward current collector power dissipation junction temperature storage temperature range isolation voltage screw torque conditions unit ratings v v v a a w c c v n ?m v ces v ges v ses i c i cp i f i fm p c t j t stg v lsol 500 4.0 8.0 4.5 1.0 5.5 0.6 200 13.2 0.045 0.125 na ma v v pf s v s na a v c/w 3.2 51200 0.14 0.07 0.21 0.49 0.28 0.77 4.0 0.3 4.0 1050 electrical characteristics (ta = 25 c) symbol parameter test conditions limits min. typ. max. unit dc 1ms dc 1ms t erminal (m4/m6) mounting t urn-on delay time rise time t urn-on time t urn-off delay time fall time t urn-off time sense leakage current sense start current sense voltage
dec.2005 mitsubishi igbt modules MG400V1US51A high power switching applications motor control applications note 1: switching time and reverse recovery time test circuit and timing chart switching time test circuit timing chart note 2: sense start current and sense voltage test circuit t est circuit *measurement in the complete charge period. t iming chart v cc l i f r g r g i c ? ge 10% t d(on) i c v ge i rr 90% i rr 90% 90% 10% 20% i rr t rr t d(off) t f 10% i c 15v v se 330 ? inductance v sen 14.8v 2400a v se 15v i c i c(sen-start) v ge complete charge period
dec.2005 mitsubishi igbt modules MG400V1US51A high power switching applications motor control applications rank symbol 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 min. 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 max. 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 rank symbol a b c d e min. 4.5 4.0 3.5 3.0 2.5 max. 5.5 4.7 4.2 3.7 3.2 serial no. mg400v1us51 t52aa1 japan sen g c e c e e 34c 000001 v ce(sat) , v f rank lot no. v ce(sat) v f
dec.2005 mitsubishi igbt modules MG400V1US51A high power switching applications motor control applications performance curves 800 600 200 400 0 046810 2 800 600 400 200 0 04 10 8 6 2 10 9 12 20 common emitter t j = 25 c 15 9 12 10 20 15 v ge = 8v v ge = 8v 16 12 8 4 0 20 16 04812 i c = 800a 200 400 800 640 320 160 480 0 0812 16 20 4 t j = 125 c 800 600 200 400 0 046810 2 t j = 125 c 16 12 8 4 0 20 16 04812 i c = 800a 200 400 25 25 common emitter t j = 125 c i c - v ce collector current i c (a) gate-emitter voltage v ge (v) v ce - v ge collector-emitter voltage v ce (v) i c - v ge collector current i c (a) collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) common emitter v ce = 5v i c - v ce collector current i c (a) collector-emitter voltage v ce (v) v ce - v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) i f - v f forward current i f (a) forward voltage v f (v) common cathode v ge = 0v common emitter t j = 25 c common emitter t j = 125 c
dec.2005 mitsubishi igbt modules MG400V1US51A high power switching applications motor control applications 10 4 10 3 2 3 5 7 10 1 10 2 10 0 0812 16 4 sw time - r g switching time (ns) gate resistance r g ( ? ) sw time - i c t on t d(off) t off t d(on) t f t r t j = 25 c t j = 125 c common emitter v cc = 900v i c = 400a v ge = 15v 10 3 10 2 2 3 5 7 2 3 5 7 2 3 5 7 10 1 10 0 0 200 300 400 100 switching time (ns) collector current i c (a) t d(off) t off t j = 25 c t j = 125 c common emitter v cc = 900v r g = 2 ? v ge = 15v t on t d(on) t f 10 3 10 0 10 1 10 2 0812 16 4 sw loss - r g switching loss e on , e off (mj) gate resistance r g ( ? ) 10 2 7 5 3 2 7 5 3 2 10 1 10 0 0 200 300 400 100 sw loss - i c switching loss e on , e off (mj) collector current i c (a) e off e off e on e on 10 3 7 5 3 2 7 5 3 2 10 2 10 1 0812 16 4 i rr , t rr - r g peak reverse recovery current i rr (a) reverse recovery time t rr (ns) gate resistance r g ( ? ) i rr t rr 10 3 7 5 3 2 7 5 3 2 10 2 10 1 0 200 300 400 100 i rr , t rr - i f peak reverse recovery current i rr (a) reverse recovery time t rr (ns) forward current i f (a) i rr t rr 2 3 5 7 2 3 5 7 2 3 5 7 7 5 3 2 7 5 3 2 7 5 3 2 t r t j = 25 c t j = 125 c common emitter v cc = 900v i c = 400a v ge = 15v t j = 25 c t j = 125 c common emitter v cc = 900v r g = 2 ? v ge = 15v t j = 25 c t j = 125 c common emitter v cc = 900v i c = 400a v ge = 15v t j = 25 c t j = 125 c common emitter v cc = 900v r g = 2 ? v ge = 15v
dec.2005 mitsubishi igbt modules MG400V1US51A high power switching applications motor control applications e dsw - r g 1000 0 200 400 600 800 20 0 4 8 12 16 0 1000 1500 2000 2500 500 v ce , v ge - q g collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) charge q g (nc) common emitter r l = 2.25 ? t j = 25 c v ge = 0v f = 1mhz t c = 25 c 10 5 7 5 3 2 7 5 3 2 7 5 3 2 10 2 10 3 10 4 10 0 23 57 23 57 10 1 10 2 c - v ce capacitance c (pf) collector-emitter voltage v ce (v) c ies c res c oes r th - t w transient thermal resistance r th(j-c) ( c/w) pulse width t w (s) diode stage transistor stage 10 2 7 5 3 2 7 5 3 2 10 1 10 0 0812 16 4 reverse recovery loss e dsw (mj) gate resistance r g ( ? ) e dsw - i f 10 2 7 5 3 2 7 5 3 2 10 1 10 0 0 200 300 400 100 reverse recovery loss e dsw (mj) forward current i f (a) t c = 25 c 10 0 7 5 3 2 7 5 3 2 7 5 3 2 10 -3 10 -2 10 -1 10 -3 23 57 10 -1 10 0 10 1 10 -2 23 57 23 57 23 57 t j = 25 c t j = 125 c common emitter v cc = 900v i c = 400a v ge = 15v t j = 25 c t j = 125 c common emitter v cc = 900v r g = 2 ? v ge = 15v 600 300 900 v ce =0v
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